Part Details for IRFS3806PBF by Infineon Technologies AG
Results Overview of IRFS3806PBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
IRFS3806PBF Information
IRFS3806PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS3806PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IRFS3806PBF-ND
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DigiKey | MOSFET N-CH 60V 43A D2PAK Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
70019744
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RS | IRFS3806PBF N-channel MOSFET Transistor, 43 A, 60 V, 3-Pin D2PAK | Infineon IRFS3806PBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.0600 | RFQ |
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DISTI #
SP001557312
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EBV Elektronik | Trans MOSFET NCH 60V 43A 3Pin2Tab D2PAK (Alt: SP001557312) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
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Win Source Electronics | MOSFET N-CH 60V 43A D2PAK | 24010 |
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$1.1310 / $1.6960 | Buy Now |
Part Details for IRFS3806PBF
IRFS3806PBF CAD Models
IRFS3806PBF Part Data Attributes
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IRFS3806PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS3806PBF
Infineon Technologies AG
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 73 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 43 A | |
| Drain-source On Resistance-Max | 0.0158 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 71 W | |
| Pulsed Drain Current-Max (IDM) | 170 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |