Part Details for IRFS3607TRLPBF by Infineon Technologies AG
Overview of IRFS3607TRLPBF by Infineon Technologies AG
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFS3607TRLPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
43AC3279
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Newark | Mosfet, N-Ch, 75V, 80A, To-263-3, Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:75V, On Resistance Rds(On):0.00734Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFS3607TRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 13883 |
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$1.1500 / $1.5800 | Buy Now |
DISTI #
86AK5327
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Newark | Mosfet, N-Ch, 75V, 80A, To-263 Rohs Compliant: Yes |Infineon IRFS3607TRLPBF Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.7220 / $0.8720 | Buy Now |
DISTI #
IRFS3607TRLPBFCT-ND
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DigiKey | MOSFET N-CH 75V 80A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
23841 In Stock |
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$0.5979 / $1.5200 | Buy Now |
DISTI #
IRFS3607TRLPBF
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Avnet Americas | Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS3607TRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 800 |
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$0.5313 / $0.6452 | Buy Now |
DISTI #
942-IRFS3607TRLPBF
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Mouser Electronics | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg RoHS: Compliant | 3126 |
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$0.5970 / $1.3200 | Buy Now |
DISTI #
70019026
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RS | IRFS3607TRLPBF N-channel MOSFET Transistor, 80 A, 75 V, 3-Pin D2PAK | Infineon IRFS3607TRLPBF RoHS: Not Compliant Min Qty: 3200 Package Multiple: 1 Container: Bulk | 0 |
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$0.6900 / $0.8600 | RFQ |
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Future Electronics | Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 3200 Package Multiple: 800 Container: Reel | 0Reel |
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$0.5400 / $0.5900 | Buy Now |
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Future Electronics | Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 3200 Package Multiple: 800 Container: Reel | 0Reel |
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$0.5400 / $0.5900 | Buy Now |
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Quest Components | 80 A, 75 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 2560 |
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$1.0140 / $2.7040 | Buy Now |
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Rochester Electronics | IRFS3607TRLPBF - TRENCH 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 | 4000 |
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$0.5645 / $0.6641 | Buy Now |
Part Details for IRFS3607TRLPBF
IRFS3607TRLPBF CAD Models
IRFS3607TRLPBF Part Data Attributes:
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IRFS3607TRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS3607TRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.009 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Pulsed Drain Current-Max (IDM) | 310 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFS3607TRLPBF
This table gives cross-reference parts and alternative options found for IRFS3607TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS3607TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
AUIRFS3607 | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFS3607TRLPBF vs AUIRFS3607 |