Part Details for IRFS3306TRLPBF by Infineon Technologies AG
Overview of IRFS3306TRLPBF by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRFS3306TRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9153
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Newark | Mosfet, N-Ch, 60V, 120A, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:120A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0033Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFS3306TRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1214 |
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$1.5900 / $3.1000 | Buy Now |
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DISTI #
IRFS3306TRLPBFCT-ND
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DigiKey | MOSFET N-CH 60V 120A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6056 In Stock |
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$1.1905 / $2.7400 | Buy Now |
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DISTI #
IRFS3306TRLPBF
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Avnet Americas | Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS3306TRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.0744 / $1.3046 | Buy Now |
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DISTI #
942-IRFS3306TRLPBF
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Mouser Electronics | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg RoHS: Compliant | 205 |
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$1.1900 / $2.7400 | Buy Now |
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DISTI #
70019024
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RS | IRFS3306TRLPBF N-channel MOSFET Transistor, 160 A, 60 V, 3-Pin D2PAK | Infineon IRFS3306TRLPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$2.4700 | RFQ |
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Future Electronics | Single N-Channel 60V 4.2 mOhm 85 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 800Reel |
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$0.6800 / $0.7200 | Buy Now |
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Future Electronics | Single N-Channel 60V 4.2 mOhm 85 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$1.2100 / $1.2700 | Buy Now |
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DISTI #
IRFS3306TRLPBF
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TME | Transistor: N-MOSFET, unipolar, 60V, 110A, Idm: 620A, 230W, D2PAK Min Qty: 1 | 603 |
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$1.5000 / $2.6200 | Buy Now |
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Ameya Holding Limited | Min Qty: 800 | 766 |
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$1.9320 | Buy Now |
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DISTI #
TMOSP12395
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Rutronik | N-CH 60V 120A 3,3mOhm D2PAK RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel |
Stock DE - 7200 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$1.1300 / $1.4700 | Buy Now |
Part Details for IRFS3306TRLPBF
IRFS3306TRLPBF CAD Models
IRFS3306TRLPBF Part Data Attributes:
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IRFS3306TRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS3306TRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 184 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0042 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 620 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS3306TRLPBF
This table gives cross-reference parts and alternative options found for IRFS3306TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS3306TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRFS3306 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Infineon Technologies AG | IRFS3306TRLPBF vs AUIRFS3306 |