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Part Details for IRFR9210PBF by Vishay Intertechnologies
Overview of IRFR9210PBF by Vishay Intertechnologies
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRFR9210PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63J7013
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Newark | P Channel Mosfet, -200V, 1.9A D-Pak, Channel Type:P Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:1.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFR9210PBF Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
IRFR9210PBF
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Avnet Americas | Trans MOSFET P-CH 200V 1.9A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRFR9210PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
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$0.5013 / $0.6368 | Buy Now |
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DISTI #
844-IRFR9210PBF
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Mouser Electronics | MOSFET 200V P-CH HEXFET MOSFET D RoHS: Compliant | 3374 |
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$0.6360 / $1.1200 | Buy Now |
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Future Electronics | Single P-Channel 200 V 3 Ohm 25 W Surface Mount Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.4900 / $0.5750 | Buy Now |
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Future Electronics | Single P-Channel 200 V 3 Ohm 25 W Surface Mount Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.4900 / $0.5750 | Buy Now |
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DISTI #
67020602
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Verical | Trans MOSFET P-CH 200V 1.9A 3-Pin(2+Tab) DPAK Min Qty: 25 Package Multiple: 1 Date Code: 2304 | Americas - 550 |
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$0.6805 / $0.8924 | Buy Now |
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Bristol Electronics | 50 |
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RFQ | ||
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DISTI #
IRFR9210PBF
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TTI | MOSFET 200V P-CH HEXFET MOSFET D RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Tube |
Americas - 3000 In Stock |
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$0.4960 | Buy Now |
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DISTI #
IRFR9210PBF
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Avnet Americas | Trans MOSFET P-CH 200V 1.9A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRFR9210PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
|
$0.5013 / $0.6368 | Buy Now |
|
DISTI #
IRFR9210PBF
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TME | Transistor: P-MOSFET, unipolar, -200V, -1.2A, 25W, DPAK,TO252 Min Qty: 1 | 0 |
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$0.3300 / $0.8910 | RFQ |
Part Details for IRFR9210PBF
IRFR9210PBF CAD Models
IRFR9210PBF Part Data Attributes:
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IRFR9210PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR9210PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-252AA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 1.9 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 7.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR9210PBF
This table gives cross-reference parts and alternative options found for IRFR9210PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9210PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR9210TRLPBF | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Vishay Intertechnologies | IRFR9210PBF vs IRFR9210TRLPBF |
| SIHFR9210T-E3 | TRANSISTOR 1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR9210PBF vs SIHFR9210T-E3 |
| SIHFR9210TR-GE3 | TRANSISTOR 1.9 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR9210PBF vs SIHFR9210TR-GE3 |
| IRFR9210TRR | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR9210PBF vs IRFR9210TRR |
| IRFR9210-T1 | Power Field-Effect Transistor, 2A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR9210PBF vs IRFR9210-T1 |
| IRFR9210TR | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR9210PBF vs IRFR9210TR |
| IRFR9210 | Power Field-Effect Transistor, 2A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR9210PBF vs IRFR9210 |
| IRFR9210TRPBF | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR9210PBF vs IRFR9210TRPBF |