Transistors
IRFR3709Z
Description: Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

Overview of IRFR3709Z by International Rectifier

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Price & Stock for IRFR3709Z by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   238
RFQ
Bristol Electronics   150
RFQ
Bristol Electronics   74
RFQ
Quest Components   2304
  • 1 $1.4000
  • 287 $0.5600
  • 1,430 $0.4900
$0.4900 / $1.4000 Buy Now
Quest Components   190
  • 1 $1.6800
  • 16 $0.8400
  • 72 $0.5040
$0.5040 / $1.6800 Buy Now
Quest Components   120
  • 1 $2.3600
  • 52 $1.2980
  • 117 $1.1800
$1.1800 / $2.3600 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 9
  • 1 $2.6900
  • 100 $2.0200
  • 1,000 $1.7500
$1.7500 / $2.6900 Buy Now

CAD Models for IRFR3709Z by International Rectifier
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Part Data Attributes for IRFR3709Z by International Rectifier

IRFR3709Z
International Rectifier
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-252AA
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
100 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
30 A
Drain-source On Resistance-Max
0.0065 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
240
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
79 W
Pulsed Drain Current-Max (IDM)
340 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFR3709Z
    International Rectifier
    Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
    VS

Alternate Parts for IRFR3709Z

This table gives cross-reference parts and alternative options found for IRFR3709Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3709Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR3709ZCPBF Power Field-Effect Transistor, 86A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRFR3709Z vs IRFR3709ZCPBF
IRFR3709ZPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3709Z vs IRFR3709ZPBF
IRFR3709ZTRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3709Z vs IRFR3709ZTRPBF
IRFR3709ZTRRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR3709Z vs IRFR3709ZTRRPBF
IRFR3709ZTR Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRFR3709Z vs IRFR3709ZTR
IRFR3709ZTRRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3709Z vs IRFR3709ZTRRPBF
IRFR3709ZTRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR3709Z vs IRFR3709ZTRPBF
Part Number Description Manufacturer Compare
IRFR3709ZCPBF Power Field-Effect Transistor, 86A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRFR3709Z vs IRFR3709ZCPBF
IRFR3709ZTR Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRFR3709Z vs IRFR3709ZTR
IRLR8113TRRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3709Z vs IRLR8113TRRPBF
IRFR3709ZPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3709Z vs IRFR3709ZPBF
IRLR8113TRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3709Z vs IRLR8113TRPBF
IRFR3709ZTRRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR3709Z vs IRFR3709ZTRRPBF
IRFR3709ZTRRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3709Z vs IRFR3709ZTRRPBF
IRLR8113TRLPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3709Z vs IRLR8113TRLPBF
IRFR3709ZTRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR3709Z vs IRFR3709ZTRPBF
IRLR8113PBF Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR3709Z vs IRLR8113PBF

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