-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IRFR220NTRPBF by Infineon Technologies AG
Results Overview of IRFR220NTRPBF by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFR220NTRPBF Information
IRFR220NTRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFR220NTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
42Y0379
|
Newark | Mosfet, N-Ch, 200V, 5A, To-252Aa, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuo... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2798 |
|
$0.3210 | Buy Now |
|
DISTI #
86AK5308
|
Newark | Mosfet, N-Ch, 200V, 5A, To-252Aa Rohs Compliant: Yes |Infineon IRFR220NTRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.4350 / $0.4570 | Buy Now |
|
DISTI #
IRFR220NTRPBFCT-ND
|
DigiKey | MOSFET N-CH 200V 5A DPAK Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5057 In Stock |
|
$0.2954 / $1.1600 | Buy Now |
|
DISTI #
42Y0379
|
Avnet Americas | Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack |
821 Partner Stock |
|
$0.6540 / $1.1000 | Buy Now |
|
DISTI #
IRFR220NTRPBF
|
Avnet Americas | Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR220NTRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.2304 / $0.2396 | Buy Now |
|
DISTI #
942-IRFR220NTRPBF
|
Mouser Electronics | MOSFETs 200V 1 N-CH HEXFET 600mOhms 15nC RoHS: Compliant | 2387 |
|
$0.3020 / $1.1400 | Buy Now |
|
|
Future Electronics | Single N-Channel 200 V 600 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks Container: Reel |
0 Reel |
|
$0.2500 / $0.2650 | Buy Now |
|
|
Future Electronics | Single N-Channel 200 V 600 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks Container: Reel |
0 Reel |
|
$0.2500 / $0.2650 | Buy Now |
|
|
Bristol Electronics | 585 |
|
RFQ | ||
|
DISTI #
IRFR220NTRPBF
|
TME | Transistor: N-MOSFET, unipolar, 200V, 5A, 43W, DPAK Min Qty: 1 | 2770 |
|
$0.2680 / $0.7790 | Buy Now |
Part Details for IRFR220NTRPBF
IRFR220NTRPBF CAD Models
IRFR220NTRPBF Part Data Attributes
|
|
IRFR220NTRPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFR220NTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
Select a part to compare: |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 46 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |