Part Details for IRFR220 by Samsung Semiconductor
Overview of IRFR220 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFR220
| Part # | Distributor | Description | Stock | Price | Buy | |
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Onlinecomponents.com | Trans MOSFET N-CH 200V 4.6A 3-Pin(2+Tab) TO-252AA |
2065 In Stock |
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$0.2890 / $1.3500 | Buy Now |
Part Details for IRFR220
IRFR220 CAD Models
IRFR220 Part Data Attributes
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IRFR220
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRFR220
Samsung Semiconductor
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4.6 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 42 W | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 43 ns | |
| Turn-on Time-Max (ton) | 54 ns |
Alternate Parts for IRFR220
This table gives cross-reference parts and alternative options found for IRFR220. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR220, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR220PBF | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | International Rectifier | IRFR220 vs IRFR220PBF |
| IRFR220TRPBF | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | International Rectifier | IRFR220 vs IRFR220TRPBF |
| IRFR220PBF | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR220 vs IRFR220PBF |
| IRFR220 | 4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | IRFR220 vs IRFR220 |
| IRFR220TR | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR220 vs IRFR220TR |