Part Details for IRFR220 by Philips Semiconductors
Overview of IRFR220 by Philips Semiconductors
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for IRFR220
IRFR220 CAD Models
IRFR220 Part Data Attributes
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IRFR220
Philips Semiconductors
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Datasheet
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IRFR220
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 4.8 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Surface Mount | YES |