Part Details for IRFR220 by Philips Semiconductors
Overview of IRFR220 by Philips Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFR220
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ComSIT USA | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | Europe - 3140 |
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Part Details for IRFR220
IRFR220 CAD Models
IRFR220 Part Data Attributes
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IRFR220
Philips Semiconductors
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Datasheet
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IRFR220
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 4.8 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Surface Mount | YES |