Part Details for IRFR220 by International Rectifier
Overview of IRFR220 by International Rectifier
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFR220
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 40 |
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RFQ | ||
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Bristol Electronics | 949 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 2429 |
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$0.3125 / $0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 167 |
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$0.3815 / $0.7630 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 759 |
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$0.5000 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 52 |
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$0.7500 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 32 |
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$1.0500 / $1.7500 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 178 |
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Buy Now |
Part Details for IRFR220
IRFR220 CAD Models
IRFR220 Part Data Attributes
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IRFR220
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFR220
International Rectifier
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4.8 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 42 W | |
| Power Dissipation-Max (Abs) | 42 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR220
This table gives cross-reference parts and alternative options found for IRFR220. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR220, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR220-T1 | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRFR220 vs IRFR220-T1 |
| IRFR220 | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | IRFR220 vs IRFR220 |
| SIHFR220TRL-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | IRFR220 vs SIHFR220TRL-GE3 |
| SIHFR220-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | IRFR220 vs SIHFR220-GE3 |
| IRFR220TRLPBF | TRANSISTOR 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR220 vs IRFR220TRLPBF |
| IRFR220 | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR220 vs IRFR220 |
| SIHFR220-GE3 | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR220 vs SIHFR220-GE3 |
| IRFR220,118 | IRFR220 | NXP Semiconductors | IRFR220 vs IRFR220,118 |
| IRFR220TRRPBF | TRANSISTOR 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR220 vs IRFR220TRRPBF |
| IRFR220TRPBF | TRANSISTOR 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR220 vs IRFR220TRPBF |