Part Details for IRFR210TRPBF-BE3 by Vishay Intertechnologies
Overview of IRFR210TRPBF-BE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRFR210TRPBF-BE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06AJ9145
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Newark | N-Channel 200V |Vishay IRFR210TRPBF-BE3 Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5320 / $0.6280 | Buy Now |
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DISTI #
IRFR210TRPBF-BE3
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Avnet Americas | Transistor MOSFET N-Channel 200V 2.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IRFR210TRPBF-BE3) Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.4325 / $0.5495 | Buy Now |
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DISTI #
78-IRFR210TRPBF-BE3
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Mouser Electronics | MOSFET N-CHANNEL 200V RoHS: Compliant | 3711 |
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$0.4710 / $0.9700 | Buy Now |
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Future Electronics | Single N-Channel 200 V 1.5 Ohms Surface Mount Power - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.4150 / $0.4450 | Buy Now |
Part Details for IRFR210TRPBF-BE3
IRFR210TRPBF-BE3 CAD Models
IRFR210TRPBF-BE3 Part Data Attributes
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IRFR210TRPBF-BE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR210TRPBF-BE3
Vishay Intertechnologies
Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | DPAK-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 95 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |