Datasheets
IRFR210TRLPBF-BE3 by:

Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2

Part Details for IRFR210TRLPBF-BE3 by Vishay Intertechnologies

Overview of IRFR210TRLPBF-BE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFR210TRLPBF-BE3

Part # Distributor Description Stock Price Buy
DISTI # 06AJ9144
Newark Mosfet N-Channel 200V |Vishay IRFR210TRLPBF-BE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.6280
  • 4,000 $0.5640
  • 6,000 $0.5440
  • 10,000 $0.5320
$0.5320 / $0.6280 Buy Now
DISTI # IRFR210TRLPBF-BE3
Avnet Americas Transistor MOSFET N-Channel 200V 2.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IRFR210TRLPBF-BE3) Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.5495
  • 6,000 $0.5319
  • 12,000 $0.5142
  • 18,000 $0.4966
  • 24,000 $0.4774
  • 30,000 $0.4550
  • 300,000 $0.4325
$0.4325 / $0.5495 Buy Now
DISTI # 78-IRFR210TRLPBF-BE3
Mouser Electronics MOSFET 200V N-CH HEXFET D-PAK RoHS: Compliant 23999
  • 1 $0.9700
  • 10 $0.7950
  • 100 $0.6190
  • 500 $0.5240
  • 1,000 $0.4710
$0.4710 / $0.9700 Buy Now
Future Electronics Single N-Channel 200 V 1.5 Ohms Surface Mount Power - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.4200
  • 6,000 $0.4150
  • 9,000 $0.4100
  • 12,000 $0.4000
$0.4000 / $0.4200 Buy Now
DISTI # IRFR210TRLPBF-BE3
TTI MOSFET 200V N-CH HEXFET D-PAK RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.4340
  • 6,000 $0.4250
  • 9,000 $0.4170
  • 12,000 $0.4090
$0.4090 / $0.4340 Buy Now

Part Details for IRFR210TRLPBF-BE3

IRFR210TRLPBF-BE3 CAD Models

IRFR210TRLPBF-BE3 Part Data Attributes

IRFR210TRLPBF-BE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFR210TRLPBF-BE3 Vishay Intertechnologies Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description DPAK-3/2
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 95 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 2.6 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 10 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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