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Part Details for IRFR210PBF by Vishay Intertechnologies
Overview of IRFR210PBF by Vishay Intertechnologies
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRFR210PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38K2607
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Newark | Mosfet, N-Ch, 200V, 2.6A, 150Deg C, 25W, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:2.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFR210PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.2620 / $0.8160 | Buy Now |
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DISTI #
IRFR210PBF
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Avnet Americas | Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: IRFR210PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.4325 / $0.5495 | Buy Now |
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DISTI #
844-IRFR210PBF
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Mouser Electronics | MOSFET N-Chan 200V 2.6 Amp RoHS: Compliant | 14144 |
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$0.4710 / $0.7900 | Buy Now |
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DISTI #
E02:0323_00193121
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Arrow Electronics | Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2307 | Europe - 4445 |
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$0.3121 / $0.4077 | Buy Now |
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DISTI #
V99:2348_09218295
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Arrow Electronics | Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2229 | Americas - 2250 |
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$0.4300 / $0.5394 | Buy Now |
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DISTI #
70078958
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RS | MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 1.5 Ohms, ID 2.6A, TO-252AA, PD 25W, VGS +/-20V | Vishay PCS IRFR210PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 3000 |
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$0.7700 / $0.9000 | Buy Now |
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Future Electronics | Single N-Channel 200 V 1.5 Ohm 25 W Surface Mount Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.4300 / $0.4550 | Buy Now |
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Future Electronics | Single N-Channel 200 V 1.5 Ohm 25 W Surface Mount Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.4300 / $0.4550 | Buy Now |
|
DISTI #
69856630
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Verical | Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK Min Qty: 24 Package Multiple: 1 Date Code: 2307 | Americas - 4445 |
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$0.3118 / $0.3674 | Buy Now |
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DISTI #
64934154
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Verical | Trans MOSFET N-CH 200V 2.6A 3-Pin(2+Tab) DPAK Min Qty: 14 Package Multiple: 1 Date Code: 2229 | Americas - 2250 |
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$0.4300 / $0.4794 | Buy Now |
Part Details for IRFR210PBF
IRFR210PBF CAD Models
IRFR210PBF Part Data Attributes
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IRFR210PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR210PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-252AA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR210PBF
This table gives cross-reference parts and alternative options found for IRFR210PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR210PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR210 | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR210PBF vs IRFR210 |
| IRFR210-T1 | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | IRFR210PBF vs IRFR210-T1 |
| IRFR210TRLPBF | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR210PBF vs IRFR210TRLPBF |
| SIHFR210TRL-GE3 | TRANSISTOR 2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR210PBF vs SIHFR210TRL-GE3 |
| IRFR210 | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Vishay Siliconix | IRFR210PBF vs IRFR210 |
| IRFR210 | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR210PBF vs IRFR210 |
| IRFR210TRPBF | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR210PBF vs IRFR210TRPBF |
| IRFR210 | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Fairchild Semiconductor Corporation | IRFR210PBF vs IRFR210 |
| IRFR210PBF | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Vishay Siliconix | IRFR210PBF vs IRFR210PBF |
| IRFR210PBF | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR210PBF vs IRFR210PBF |