Part Details for IRFR1N60A by International Rectifier
Results Overview of IRFR1N60A by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFR1N60A Information
IRFR1N60A by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRFR1N60A
IRFR1N60A CAD Models
IRFR1N60A Part Data Attributes
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IRFR1N60A
International Rectifier
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Datasheet
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IRFR1N60A
International Rectifier
Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-252AA | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 93 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 1.4 A | |
| Drain-source On Resistance-Max | 7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 36 W | |
| Pulsed Drain Current-Max (IDM) | 5.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR1N60A
This table gives cross-reference parts and alternative options found for IRFR1N60A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR1N60A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFR1N60APBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | IRFR1N60A vs IRFR1N60APBF |
| IRFR1N60ATRLPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | IRFR1N60A vs IRFR1N60ATRLPBF |
| IRFR1N60A | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | IRFR1N60A vs IRFR1N60A |
| IRFR1N60APBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | IRFR1N60A vs IRFR1N60APBF |
| SIHFR1N60A-GE3 | Vishay Siliconix | Check for Price | TRANSISTOR POWER, FET, FET General Purpose Power | IRFR1N60A vs SIHFR1N60A-GE3 |