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Transistors Power Field-Effect Transistors IRFR120TRLPBF

Transistors
IRFR120TRLPBF
Description: Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

Overview of IRFR120TRLPBF by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFR120TRLPBF by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # IRFR120LPBFCT-ND
DigiKey MOSFET N-CH 100V 7.7A DPAK Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Tape & Reel (TR) 6121
In Stock
  • 1 $1.5300
  • 10 $1.2490
  • 100 $0.9714
  • 500 $0.8234
  • 1,000 $0.6707
  • 3,000 $0.5725
$0.5725 / $1.5300 Buy Now

CAD Models for IRFR120TRLPBF by Vishay Siliconix
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Part Data Attributes for IRFR120TRLPBF by Vishay Siliconix
Parametric Data

IRFR120TRLPBF
Vishay Siliconix
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
TO-252AA
Package Description
ROHS COMPLIANT, PLASTIC, DPAK-3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
210 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
7.7 A
Drain-source On Resistance-Max
0.27 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
31 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFR120TRLPBF
    Vishay Siliconix
    Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
    VS

Alternate Parts for IRFR120TRLPBF

This table gives cross-reference parts and alternative options found for IRFR120TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR120TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR120TRL Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR120TRLPBF vs IRFR120TRL
IRFR120TRRPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Siliconix IRFR120TRLPBF vs IRFR120TRRPBF
IRFR120 Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR120TRLPBF vs IRFR120
IRFR120TRPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Siliconix IRFR120TRLPBF vs IRFR120TRPBF
IRFR120TRPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR120TRLPBF vs IRFR120TRPBF
IRFR120TR Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR120TRLPBF vs IRFR120TR
IRFR120TRLPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR120TRLPBF vs IRFR120TRLPBF
Part Number Description Manufacturer Compare
IRFR120PBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR120TRLPBF vs IRFR120PBF
IRFR120 Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR120TRLPBF vs IRFR120
IRFR120TRL Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR120TRLPBF vs IRFR120TRL
IRFR120TRLPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR120TRLPBF vs IRFR120TRLPBF
IRFR120TRPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR120TRLPBF vs IRFR120TRPBF
IRFR120TR Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR120TRLPBF vs IRFR120TR

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