Datasheets
IRFR120NPBF by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3

Part Details for IRFR120NPBF by International Rectifier

Results Overview of IRFR120NPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRFR120NPBF Information

IRFR120NPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFR120NPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   18
RFQ
ComSIT USA MOSFET Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal... -oxide Semiconductor FET, TO-252AA more RoHS: Compliant Stock DE - 167
Stock ES - 21
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRFR120NPBF

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IRFR120NPBF Part Data Attributes

IRFR120NPBF International Rectifier
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IRFR120NPBF International Rectifier Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-252AA
Package Description LEAD FREE, PLASTIC, DPAK-2/3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 91 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 9.4 A
Drain-source On Resistance-Max 0.21 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 38 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR120NPBF

This table gives cross-reference parts and alternative options found for IRFR120NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR120NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFR120NTRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 IRFR120NPBF vs IRFR120NTRLPBF
IRFR120NTRLPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 IRFR120NPBF vs IRFR120NTRLPBF
IRFR120NTRPBF Infineon Technologies AG $0.4536 Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 IRFR120NPBF vs IRFR120NTRPBF
IRFR120N International Rectifier Check for Price Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 IRFR120NPBF vs IRFR120N
IRFR120NPBF Infineon Technologies AG $0.4030 Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 IRFR120NPBF vs IRFR120NPBF
IRFR120NTR International Rectifier Check for Price Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 IRFR120NPBF vs IRFR120NTR
IRFR120NTRPBF International Rectifier $0.2035 Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 IRFR120NPBF vs IRFR120NTRPBF
IRFR120NTRL International Rectifier Check for Price Power Field-Effect Transistor, 9.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 IRFR120NPBF vs IRFR120NTRL
IRFR120NTRRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 IRFR120NPBF vs IRFR120NTRRPBF

IRFR120NPBF Related Parts

IRFR120NPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFR120NPBF is -55°C to 175°C.

  • Yes, the IRFR120NPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.

  • To ensure proper cooling, provide a heat sink with a thermal resistance of ≤ 10°C/W, and consider using a thermal interface material to reduce thermal resistance between the device and heat sink.

  • The recommended gate drive voltage for the IRFR120NPBF is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.

  • Yes, you can use multiple IRFR120NPBF devices in parallel to increase current handling, but ensure that each device has its own gate drive and that the devices are properly matched to minimize current imbalance.