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Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFR110PBF-ND
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DigiKey | MOSFET N-CH 100V 4.3A DPAK Min Qty: 1 Lead time: 14 Weeks Container: Tube |
3447 In Stock |
|
$0.3608 / $0.9600 | Buy Now |
DISTI #
70459484
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RS | MOSFET N-CH 100V 4.3A DPAK | Siliconix / Vishay IRFR110PBF RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
|
$0.7900 / $0.9300 | RFQ |
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Bristol Electronics | 50 |
|
RFQ | ||
|
Quest Components | 40 |
|
$0.6510 / $1.0850 | Buy Now |
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IRFR110PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFR110PBF
Vishay Siliconix
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | TO-252AA | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 75 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 4.3 A | |
Drain-source On Resistance-Max | 0.54 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 17 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR110TRPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Vishay Siliconix | IRFR110PBF vs IRFR110TRPBF |
IRFR110TRLPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Vishay Siliconix | IRFR110PBF vs IRFR110TRLPBF |
SIHFR110TRL-GE3 | TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR110PBF vs SIHFR110TRL-GE3 |
IRFR110PBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR110PBF vs IRFR110PBF |
IRFR110 | 4.7A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | IRFR110PBF vs IRFR110 |
IRFR110 | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR110PBF vs IRFR110 |
IRFR110 | Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | IRFR110PBF vs IRFR110 |
IRFR110TRL | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR110PBF vs IRFR110TRL |
IRFR110TRLPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR110PBF vs IRFR110TRLPBF |
IRFR110TRLPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR110PBF vs IRFR110TRLPBF |