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Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K2600
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Newark | Mosfet, N-Ch, 100V, 4.3A, 150Deg C, 25W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:4.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFR110PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.5200 / $0.8010 | Buy Now |
DISTI #
IRFR110PBF
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Avnet Americas | Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRFR110PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Bulk | 9000 |
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$0.4740 | Buy Now |
DISTI #
844-IRFR110PBF
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Mouser Electronics | MOSFET N-Chan 100V 4.3 Amp RoHS: Compliant | 4145 |
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$0.4710 / $0.7900 | Buy Now |
DISTI #
70078957
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.54Ohm, ID 4.3A, TO-252AA, PD 25W, VGS +/-20V | Vishay PCS IRFR110PBF RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.5400 / $0.6400 | RFQ |
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Future Electronics | Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.3900 / $0.4750 | Buy Now |
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Future Electronics | Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Container: Tube | 0Tube |
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$0.3900 / $0.4750 | Buy Now |
DISTI #
78970265
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Verical | Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK Min Qty: 29 Package Multiple: 1 Date Code: 2411 | Americas - 667 |
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$0.3193 / $0.4761 | Buy Now |
DISTI #
IRFR110PBF
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TTI | MOSFET N-Chan 100V 4.3 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 75 Package Multiple: 75 Container: Tube |
Americas - 2475 In Stock |
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$0.4200 / $0.4890 | Buy Now |
DISTI #
IRFR110PBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 2.7A, 25W, DPAK,TO252 Min Qty: 1 | 483 |
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$0.3130 / $0.9360 | Buy Now |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | Europe - 6750 |
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RFQ |
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IRFR110PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFR110PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-252AA | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 4.3 A | |
Drain-source On Resistance-Max | 0.54 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 17 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR110TRLPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR110PBF vs IRFR110TRLPBF |
IRFR110TRLPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR110PBF vs IRFR110TRLPBF |
IRFR110 | Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | IRFR110PBF vs IRFR110 |
IRFR110TRRPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR110PBF vs IRFR110TRRPBF |
IRFR110TRPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR110PBF vs IRFR110TRPBF |
IRFR110 | 4.7A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | IRFR110PBF vs IRFR110 |
IRFR110TRLPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Vishay Siliconix | IRFR110PBF vs IRFR110TRLPBF |
IRFR110TRPBF | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Vishay Siliconix | IRFR110PBF vs IRFR110TRPBF |
IRFR110TRR | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR110PBF vs IRFR110TRR |
IRFR110 | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR110PBF vs IRFR110 |