Datasheets
IRFR014 by:

Power Field-Effect Transistor, 8.2A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

Part Details for IRFR014 by Fairchild Semiconductor Corporation

Overview of IRFR014 by Fairchild Semiconductor Corporation

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Part Details for IRFR014

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IRFR014 Part Data Attributes:

IRFR014 Fairchild Semiconductor Corporation
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IRFR014 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 8.2A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 58 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8.2 A
Drain-source On Resistance-Max 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 33 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR014

This table gives cross-reference parts and alternative options found for IRFR014. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR014, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR014TRRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Vishay Intertechnologies IRFR014 vs IRFR014TRRPBF
IRFR014 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR014 vs IRFR014
IRFR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR014 vs IRFR014TRPBF
IRFR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR014 vs IRFR014
SIHFR014TR-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR014 vs SIHFR014TR-GE3
IRFR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR014 vs IRFR014
IRFR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Vishay Intertechnologies IRFR014 vs IRFR014TRL
IRFR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR014 vs IRFR014TRL
IRFR014PBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR014 vs IRFR014PBF
Part Number Description Manufacturer Compare
IRFR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR014 vs IRFR014
IRFR014PBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR014 vs IRFR014PBF
IRFR014 Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR014 vs IRFR014
IRFR014TRRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Vishay Intertechnologies IRFR014 vs IRFR014TRRPBF
IRFR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Vishay Intertechnologies IRFR014 vs IRFR014TRL
IRFR014 Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR014 vs IRFR014
SIHFR014TR-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR014 vs SIHFR014TR-GE3
IRFR014TRPBF Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR014 vs IRFR014TRPBF
IRFR014TRL Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR014 vs IRFR014TRL

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