-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
V99:2348_09219151
|
Arrow Electronics | Trans MOSFET N-CH 600V 38A 3-Pin Super-247 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks Date Code: 1947 | Americas - 424 |
|
$1.8530 / $9.7404 | Buy Now |
DISTI #
35856715
|
Verical | Trans MOSFET N-CH 600V 38A 3-Pin Super-247 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1947 | Americas - 424 |
|
$9.7404 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRFPS38N60LPBF
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
IRFPS38N60LPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 680 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 38 A | |
Drain-source On Resistance-Max | 0.15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 540 W | |
Pulsed Drain Current-Max (IDM) | 150 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFPS38N60LPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPS38N60LPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFPS38N60LPBF | Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 | International Rectifier | IRFPS38N60LPBF vs IRFPS38N60LPBF |