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Transistors / Power Field-Effect Transistors / IRFPS37N50A
Datasheets
IRFPS37N50A by:
International Rectifier
International Rectifier
Vishay Huntington
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN

Part Details for IRFPS37N50A by International Rectifier

Results Overview of IRFPS37N50A by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Motor control systems

IRFPS37N50A Information

IRFPS37N50A by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFPS37N50A

Part # Distributor Description Stock Price Buy
Quest Components 36 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET 1022
  • 1 $15.0000
  • 109 $8.2500
  • 243 $7.5000
$7.5000 / $15.0000 Buy Now
Quest Components 36 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET 106
  • 1 $7.0926
  • 15 $4.7284
  • 54 $4.3738
$4.3738 / $7.0926 Buy Now
Quest Components 36 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET 31
  • 1 $10.9800
  • 6 $8.2350
  • 31 $7.1370
$7.1370 / $10.9800 Buy Now
Quest Components 36 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET 20
  • 1 $12.0000
  • 4 $8.8000
  • 10 $8.0000
$8.0000 / $12.0000 Buy Now
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 42
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for IRFPS37N50A

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IRFPS37N50A Part Data Attributes

Parametric Data
IRFPS37N50A International Rectifier
Buy Now Datasheet
Compare Parts:
IRFPS37N50A International Rectifier Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER-247, 3 PIN
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description SUPER-247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 1260 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 446 W
Pulsed Drain Current-Max (IDM) 144 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFPS37N50A

This table gives cross-reference parts and alternative options found for IRFPS37N50A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPS37N50A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFPS37N50APBF International Rectifier Check for Price Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPER-247, 3 PIN IRFPS37N50A vs IRFPS37N50APBF

IRFPS37N50A Related Parts

IRFPS37N50A Frequently Asked Questions (FAQ)

  • The maximum junction temperature (Tj) of the IRFPS37N50A is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.

  • To calculate the power dissipation of the IRFPS37N50A, you need to know the drain-source on-resistance (Rds(on)), the drain current (ID), and the voltage across the device (Vds). The power dissipation (Pd) can be calculated using the formula: Pd = Rds(on) x ID^2 + Vds x ID.

  • The recommended gate drive voltage for the IRFPS37N50A is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.

  • Yes, the IRFPS37N50A is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the gate drive circuitry to ensure reliable operation.

  • To protect the IRFPS37N50A from overvoltage and overcurrent, you can use a combination of voltage regulators, current sensors, and protection circuits. Additionally, it's essential to follow proper PCB design and layout practices to minimize parasitic inductance and capacitance.