Part Details for IRFPE30 by International Rectifier
Overview of IRFPE30 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFPE30
IRFPE30 CAD Models
IRFPE30 Part Data Attributes
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IRFPE30
International Rectifier
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Datasheet
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IRFPE30
International Rectifier
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 170 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 4.1 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 225 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 125 W | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFPE30
This table gives cross-reference parts and alternative options found for IRFPE30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPE30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HUF75631P3 | 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRFPE30 vs HUF75631P3 |
HUF75631P3 | Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | IRFPE30 vs HUF75631P3 |
FS50UM-2 | Power Field-Effect Transistor, 50A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Powerex Power Semiconductors | IRFPE30 vs FS50UM-2 |
HUF75631P3_NL | Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fairchild Semiconductor Corporation | IRFPE30 vs HUF75631P3_NL |
IRFPE30PBF | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | IRFPE30 vs IRFPE30PBF |