Part Details for IRFPC30 by International Rectifier
Results Overview of IRFPC30 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFPC30 Information
IRFPC30 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFPC30
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 50 |
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RFQ | ||
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Bristol Electronics | 9 |
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RFQ | ||
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Quest Components | 4.3A, 600V, 2.2OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AC | 13 |
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$5.2500 / $10.5000 | Buy Now |
Part Details for IRFPC30
IRFPC30 CAD Models
IRFPC30 Part Data Attributes
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IRFPC30
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFPC30
International Rectifier
Power Field-Effect Transistor, 4.3A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 2.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 100 W | |
| Power Dissipation-Max (Abs) | 100 W | |
| Pulsed Drain Current-Max (IDM) | 17 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFPC30
This table gives cross-reference parts and alternative options found for IRFPC30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFPC30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQAF6N80 | Rochester Electronics LLC | Check for Price | 4.4A, 800V, 1.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN | IRFPC30 vs FQAF6N80 |
| RFP8P08 | Rochester Electronics LLC | Check for Price | 8A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRFPC30 vs RFP8P08 |
| FQAF11N90 | Rochester Electronics LLC | Check for Price | 7.2A, 900V, 0.96ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN | IRFPC30 vs FQAF11N90 |
| FQPF13N10 | Rochester Electronics LLC | Check for Price | 8.7A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN | IRFPC30 vs FQPF13N10 |
| IRF3515SHR | International Rectifier | Check for Price | Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2 | IRFPC30 vs IRF3515SHR |
| SSH6N90A | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IRFPC30 vs SSH6N90A |
| SPB47N10L | Siemens | Check for Price | Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRFPC30 vs SPB47N10L |
| FDA16N50 | Rochester Electronics LLC | Check for Price | 16.5A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3, TO-3PN, 3 PIN | IRFPC30 vs FDA16N50 |
| FQPF17N40T | Rochester Electronics LLC | Check for Price | 9.5A, 400V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PIN | IRFPC30 vs FQPF17N40T |
| FDB6676 | Rochester Electronics LLC | Check for Price | 75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | IRFPC30 vs FDB6676 |