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Part Details for IRFP4868PBF by Infineon Technologies AG
Overview of IRFP4868PBF by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFP4868PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
31Y2068
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Newark | Mosfet, N-Ch, 300V, 70A, 175Deg C, 517W, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:70A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IRFP4868PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$4.1800 / $7.2700 | Buy Now |
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DISTI #
IRFP4868PBF-ND
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DigiKey | MOSFET N-CH 300V 70A TO247AC Min Qty: 1 Lead time: 12 Weeks Container: Tube |
1177 In Stock |
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$3.7723 / $7.1000 | Buy Now |
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DISTI #
IRFP4868PBF
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Avnet Americas | Trans MOSFET N-CH 300V 70A 3-Pin(3+Tab) TO-247AC Tube - Rail/Tube (Alt: IRFP4868PBF) RoHS: Not Compliant Min Qty: 400 Package Multiple: 25 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$3.4446 / $4.1827 | Buy Now |
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DISTI #
942-IRFP4868PBF
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Mouser Electronics | MOSFET 300V, 70A, 32 mOhm 180 nC Qg, TO-247AC RoHS: Compliant | 429 |
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$3.7700 / $6.6000 | Buy Now |
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DISTI #
70411661
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RS | IRFP4868PBF N-channel MOSFET Transistor, 70 A, 300 V, 3-Pin TO-247AC | Infineon IRFP4868PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$6.0200 / $7.0800 | RFQ |
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Future Electronics | Single N-Channel 300 V 32 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Container: Tube | 1000Tube |
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$3.3500 / $3.7300 | Buy Now |
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Future Electronics | Single N-Channel 300 V 32 mOhm 270 nC HEXFET® Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 25 Container: Tube | 0Tube |
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$3.3500 / $3.9100 | Buy Now |
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Rochester Electronics | IRFP4868 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 70 |
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$3.6600 / $4.3100 | Buy Now |
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DISTI #
IRFP4868PBF
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TME | Transistor: N-MOSFET, unipolar, 300V, 70A, 517W, TO247AC Min Qty: 1 | 302 |
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$5.9900 / $8.0900 | Buy Now |
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Ameya Holding Limited | Min Qty: 25 | 189 |
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$7.3893 / $7.8534 | Buy Now |
Part Details for IRFP4868PBF
IRFP4868PBF CAD Models
IRFP4868PBF Part Data Attributes:
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IRFP4868PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFP4868PBF
Infineon Technologies AG
Power Field-Effect Transistor, 70A I(D), 300V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Description | International Rectifier IRFP4868PBF N-channel MOSFET Transistor, 70 A, 300 V, 3-Pin TO-247AC | |
| Samacsys Manufacturer | Infineon | |
| Samacsys Modified On | 2023-03-07 16:10:32 | |
| Avalanche Energy Rating (Eas) | 1093 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 517 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |