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Transistors / Power Field-Effect Transistors / IRFP460LC
Datasheets
IRFP460LC by:
Vishay Siliconix
International Rectifier
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

Part Details for IRFP460LC by Vishay Siliconix

Results Overview of IRFP460LC by Vishay Siliconix

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRFP460LC Information

IRFP460LC by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFP460LC

Part # Distributor Description Stock Price Buy
DISTI # IRFP460LC-ND
DigiKey MOSFET N-CH 500V 20A TO247-3 Lead time: 15 Weeks Container: Tube Temporarily Out of Stock
Buy Now
Bristol Electronics   Min Qty: 2 50
  • 2 $4.9280
  • 7 $3.2032
  • 17 $2.4640
$2.4640 / $4.9280 Buy Now
Quest Components 20 A, 500 V, 0.27 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AC 40
  • 1 $6.6000
  • 3 $4.4000
  • 7 $3.3000
$3.3000 / $6.6000 Buy Now
Quest Components 20 A, 500 V, 0.27 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AC 20
  • 1 $4.3500
  • 3 $2.9000
  • 10 $2.1750
$2.1750 / $4.3500 Buy Now

Part Details for IRFP460LC

IRFP460LC CAD Models

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IRFP460LC Part Data Attributes

Parametric Data
IRFP460LC Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFP460LC Vishay Siliconix Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 960 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP460LC

This table gives cross-reference parts and alternative options found for IRFP460LC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP460LC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFP460LCPBF International Rectifier Check for Price Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN IRFP460LC vs IRFP460LCPBF
Part Number Manufacturer Composite Price Description Compare
IRFP460LCPBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 IRFP460LC vs IRFP460LCPBF
IRFP460LC International Rectifier Check for Price Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC IRFP460LC vs IRFP460LC
IRFP460LC Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, IRFP460LC vs IRFP460LC

IRFP460LC Related Parts

IRFP460LC Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRFP460LC is not explicitly stated in the datasheet, but it can be determined by consulting the SOA curves provided in the datasheet. The SOA curves show the maximum voltage and current limits for the device under various operating conditions.

  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) and a heat sink with a low thermal resistance. The datasheet provides a thermal resistance junction-to-case (RθJC) value, which can be used to estimate the maximum junction temperature.

  • The recommended gate drive voltage for the IRFP460LC is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate charge and the risk of gate oxide damage.

  • To protect the IRFP460LC from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

  • The maximum allowed dv/dt for the IRFP460LC is not explicitly stated in the datasheet, but it's typically in the range of 1-10 kV/μs. Exceeding this limit can cause the device to fail or malfunction. It's essential to ensure that the device is properly snubbed and that the gate drive circuit is designed to minimize the dv/dt stress.