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Transistors / Power Field-Effect Transistors / IRFP450A
Datasheets
IRFP450A by:
International Rectifier
Fairchild Semiconductor Corporation
International Rectifier
Samsung Semiconductor
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Details for IRFP450A by International Rectifier

Results Overview of IRFP450A by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Motor control systems

IRFP450A Information

IRFP450A by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFP450A

Part # Distributor Description Stock Price Buy
Bristol Electronics   14
RFQ
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,14A I(D),TO-247VAR 209
  • 1 $3.6900
  • 11 $1.8450
  • 109 $1.5990
$1.5990 / $3.6900 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,14A I(D),TO-247VAR 11
  • 1 $11.2560
  • 4 $8.2544
  • 10 $7.5040
$7.5040 / $11.2560 Buy Now

Part Details for IRFP450A

IRFP450A CAD Models

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IRFP450A Part Data Attributes

Parametric Data
IRFP450A International Rectifier
Buy Now Datasheet
Compare Parts:
IRFP450A International Rectifier Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 760 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 205 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP450A

This table gives cross-reference parts and alternative options found for IRFP450A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP450A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFP450A Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, IRFP450A vs IRFP450A
Part Number Manufacturer Composite Price Description Compare
IRFP450A Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN IRFP450A vs IRFP450A
IRFP450APBF Vishay Intertechnologies $1.8976 Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, IRFP450A vs IRFP450APBF
IRFP450APBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 IRFP450A vs IRFP450APBF
IRFP450A Vishay Siliconix Check for Price Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN IRFP450A vs IRFP450A

IRFP450A Related Parts

IRFP450A Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRFP450A is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides SOA curves for the device. The SOA is typically limited by the device's thermal and voltage ratings.

  • To ensure proper thermal management, the IRFP450A should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to dissipate the maximum expected power loss, and the device should be attached to the heat sink using a thermal interface material (TIM) with a thermal resistance of less than 0.1°C/W. Additionally, the ambient temperature should be kept below 50°C to ensure reliable operation.

  • The recommended gate drive voltage for the IRFP450A is between 10V and 15V. A higher gate drive voltage can improve the device's switching speed and reduce its on-state resistance, but it may also increase the gate charge and power consumption. A lower gate drive voltage can reduce the gate charge and power consumption, but it may also increase the device's on-state resistance and reduce its switching speed.

  • To protect the IRFP450A from overvoltage and overcurrent, a voltage clamp or surge protector can be used to limit the maximum voltage applied to the device. Additionally, a current sense resistor and a fuse or circuit breaker can be used to detect and interrupt overcurrent conditions. It is also recommended to use a gate drive circuit with built-in overvoltage and overcurrent protection.

  • The maximum allowed dv/dt for the IRFP450A is not explicitly stated in the datasheet, but it is typically limited to 10V/ns to prevent false triggering and ensure reliable operation. A slower dv/dt can reduce the device's switching losses and improve its reliability, but it may also increase its switching time and reduce its efficiency.