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Transistors / Power Field-Effect Transistors / IRFP450
Datasheets
IRFP450 by:
STMicroelectronics
Fairchild Semiconductor Corporation
FCI Semiconductor
General Electric Solid State
Harris Semiconductor
International Rectifier
Intersil Corporation
IXYS Corporation
Minos
National Semiconductor Corporation
New Jersey Semiconductor Products Inc
NXP Semiconductors
Philips Semiconductors
Rochester Electronics LLC
Samsung Semiconductor
SGS Thomson
STMicroelectronics
Texas Instruments
Thomson Consumer Electronics
TT Electronics Power and Hybrid / Semelab Limited
TT Electronics Resistors
Vishay Huntington
Vishay Intertechnologies
Vishay Siliconix
Not Found

14A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN

Part Details for IRFP450 by STMicroelectronics

Results Overview of IRFP450 by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Motor control systems

IRFP450 Information

IRFP450 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFP450

Part # Distributor Description Stock Price Buy
Bristol Electronics   30
RFQ

Part Details for IRFP450

IRFP450 CAD Models

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IRFP450 Part Data Attributes

Parametric Data
IRFP450 STMicroelectronics
Buy Now Datasheet
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IRFP450 STMicroelectronics 14A, 500V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-247AC
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer STMicroelectronics
Additional Feature HIGH VOLTAGE, FAST SWITCHING
Avalanche Energy Rating (Eas) 800 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 200 pF
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 180 W
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 210 ns
Turn-on Time-Max (ton) 150 ns

Alternate Parts for IRFP450

This table gives cross-reference parts and alternative options found for IRFP450. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP450, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFP450 Philips Semiconductors Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, IRFP450 vs IRFP450
Part Number Manufacturer Composite Price Description Compare
IRFP450PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 IRFP450 vs IRFP450PBF
IRFP450PBF Vishay Intertechnologies $2.2678 Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, IRFP450 vs IRFP450PBF
IRFP450 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-3P, 3 PIN IRFP450 vs IRFP450
IRFP450 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IRFP450 vs IRFP450
IRFP450 NXP Semiconductors Check for Price 14A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, PLASTIC, TO-247, 3 PIN IRFP450 vs IRFP450
IRFP450PBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN IRFP450 vs IRFP450PBF
IRFP450 IXYS Corporation Check for Price Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IRFP450 vs IRFP450
IRFP450 Intersil Corporation Check for Price 14A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 IRFP450 vs IRFP450
IRFP450 Harris Semiconductor Check for Price Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 IRFP450 vs IRFP450

IRFP450 Related Parts

IRFP450 Frequently Asked Questions (FAQ)

  • The maximum SOA for the IRFP450 is typically defined by the manufacturer as a graph of drain-source voltage (Vds) vs. drain current (Id) at a given temperature. It's essential to ensure the device operates within this area to prevent damage or degradation.

  • The thermal resistance of the IRFP450 can be calculated using the junction-to-case thermal resistance (RθJC) and the case-to-ambient thermal resistance (RθCA). The datasheet provides the RθJC value, and you can estimate RθCA based on the device's package and cooling system.

  • The recommended gate drive voltage for the IRFP450 is typically between 10V to 15V, depending on the specific application and required switching speed. A higher gate drive voltage can reduce switching losses but may increase power consumption.

  • To protect the IRFP450, you can use a combination of overvoltage protection (OVP) and overcurrent protection (OCP) circuits. OVP can be achieved using a voltage clamp or a zener diode, while OCP can be implemented using a current sense resistor and a comparator.

  • The maximum allowed drain-source voltage (Vds) for the IRFP450 is 500V. Exceeding this voltage can cause permanent damage to the device.