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Transistors / Power Field-Effect Transistors / IRFP350
Datasheets
IRFP350 by:
Vishay Siliconix
Fairchild Semiconductor Corporation
FCI Semiconductor
General Electric Solid State
Harris Semiconductor
International Rectifier
Intersil Corporation
IXYS Corporation
Littelfuse Inc
National Semiconductor Corporation
New Jersey Semiconductor Products Inc
Rochester Electronics LLC
Samsung Semiconductor
STMicroelectronics
Texas Instruments
Thomson Consumer Electronics
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for IRFP350 by Vishay Siliconix

Results Overview of IRFP350 by Vishay Siliconix

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRFP350 Information

IRFP350 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFP350

Part # Distributor Description Stock Price Buy
Bristol Electronics   25
RFQ
Bristol Electronics   5
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET 20
  • 1 $6.0000
  • 6 $4.4000
  • 18 $4.0000
$4.0000 / $6.0000 Buy Now

Part Details for IRFP350

IRFP350 CAD Models

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IRFP350 Part Data Attributes

Parametric Data
IRFP350 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFP350 Vishay Siliconix Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-247
Package Description TO-247, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 16 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for IRFP350

This table gives cross-reference parts and alternative options found for IRFP350. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP350, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFP350 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IRFP350 vs IRFP350
Part Number Manufacturer Composite Price Description Compare
IRFP350 Intersil Corporation Check for Price 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 IRFP350 vs IRFP350
IRFP350PBF International Rectifier Check for Price Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN IRFP350 vs IRFP350PBF
IRFP350 International Rectifier Check for Price Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC IRFP350 vs IRFP350
IRFP350 Harris Semiconductor Check for Price Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 IRFP350 vs IRFP350
IRFP350 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN IRFP350 vs IRFP350
IRFP350PBF Vishay Intertechnologies $2.5720 Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3 PIN IRFP350 vs IRFP350PBF
IRFP350 STMicroelectronics Check for Price 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 IRFP350 vs IRFP350

IRFP350 Related Parts

IRFP350 Frequently Asked Questions (FAQ)

  • The SOA for the IRFP350 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. A safe operating area can be determined by plotting the device's voltage and current ratings against the thermal resistance and maximum junction temperature.

  • To ensure the IRFP350 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive current should be sufficient to charge the gate capacitance quickly. A gate driver with a high current capability and a low output impedance is recommended.

  • The maximum dv/dt rating for the IRFP350 is not explicitly stated in the datasheet, but it can be estimated based on the device's internal gate resistance and capacitance. A general rule of thumb is to limit dv/dt to 1000V/μs or less to prevent spurious turn-on.

  • The IRFP350 is not optimized for high-frequency switching applications due to its relatively high gate capacitance and internal gate resistance. However, it can be used in switching applications up to 100kHz with proper gate drive and layout techniques.

  • Thermal management is critical for the IRFP350. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material with a low thermal resistance. The heat sink should be designed to dissipate the maximum expected power loss, and the device's thermal resistance should be taken into account.