Datasheets
IRFP253R by:

Power Field-Effect Transistor, 27A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Details for IRFP253R by Harris Semiconductor

Overview of IRFP253R by Harris Semiconductor

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Part Details for IRFP253R

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IRFP253R Part Data Attributes

IRFP253R Harris Semiconductor
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IRFP253R Harris Semiconductor Power Field-Effect Transistor, 27A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 810 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 27 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 180 W
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 220 ns
Turn-on Time-Max (ton) 210 ns

Alternate Parts for IRFP253R

This table gives cross-reference parts and alternative options found for IRFP253R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP253R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFP253R 27A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRFP253R vs IRFP253R
Part Number Description Manufacturer Compare
2SK2131 15A, 150V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET Renesas Electronics Corporation IRFP253R vs 2SK2131
STP30NS15LFP 10A, 150V, 0.112ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN STMicroelectronics IRFP253R vs STP30NS15LFP
2SK2131 Power Field-Effect Transistor, 15A I(D), 150V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NEC Electronics Group IRFP253R vs 2SK2131
FS30KM-3 30A, 150V, 0.092ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FN, 3 PIN Renesas Electronics Corporation IRFP253R vs FS30KM-3
IRFP240PBF Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix IRFP253R vs IRFP240PBF
FQPF28N15 16.7A, 150V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN Rochester Electronics LLC IRFP253R vs FQPF28N15
2SK572 TRANSISTOR 15 A, 150 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components IRFP253R vs 2SK572
IRFP253R 27A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRFP253R vs IRFP253R
IRFP240 Power Field-Effect Transistor, 20A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix IRFP253R vs IRFP240
2SK3155 15A, 150V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FM, 3 PIN Renesas Electronics Corporation IRFP253R vs 2SK3155

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