-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
63J6859
|
Newark | N Channel Mosfet, 200V, 30A, To-247Ac, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:30A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFP250NPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 3009 |
|
$1.2400 / $1.4600 | Buy Now |
DISTI #
IRFP250NPBF-ND
|
DigiKey | MOSFET N-CH 200V 30A TO247AC Min Qty: 1 Lead time: 10 Weeks Container: Tube |
8181 In Stock |
|
$1.3487 / $2.8900 | Buy Now |
DISTI #
IRFP250NPBF
|
Avnet Americas | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP250NPBF) RoHS: Compliant Min Qty: 25 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 170 |
|
$1.2589 / $1.5286 | Buy Now |
DISTI #
63J6859
|
Avnet Americas | Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 63J6859) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 0 Days Container: Bulk | 2181 Partner Stock |
|
$1.6600 / $2.8400 | Buy Now |
DISTI #
942-IRFP250NPBF
|
Mouser Electronics | MOSFET MOSFT 200V 30A 75mOhm 82nCAC RoHS: Compliant | 3324 |
|
$1.3100 / $2.7200 | Buy Now |
DISTI #
V36:1790_13892427
|
Arrow Electronics | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2224 | Americas - 6197 |
|
$1.2486 / $2.3665 | Buy Now |
DISTI #
E02:0323_00175270
|
Arrow Electronics | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2212 | Europe - 940 |
|
$1.0730 / $1.7176 | Buy Now |
DISTI #
V99:2348_13892427
|
Arrow Electronics | Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2209 | Americas - 444 |
|
$1.2497 / $2.3706 | Buy Now |
DISTI #
70017035
|
RS | MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 0.075Ohm, ID 30A, TO-247AC, PD 214W, VGS +/-20V | Infineon IRFP250NPBF RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
|
$2.3500 / $2.7600 | RFQ |
|
Future Electronics | Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET® Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 852Tube |
|
$1.3000 / $1.4800 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRFP250NPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFP250NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 315 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 214 W | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |