Transistors / Power Field-Effect Transistors / IRFP250

Datasheets

IRFP250 by:

International Rectifier

Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

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Part Details for IRFP250 by International Rectifier

Results Overview of IRFP250 by International Rectifier

Distributor Offerings: (8 listings)
Number of FFF Equivalents: (2 replacements)
CAD Models: (Request Part)
Number of Functional Equivalents: (9 options)
Part Data Attributes: (Available)
Reference Designs: (Not Available)

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRFP250 Information

IRFP250 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part #	Distributor	Description	Stock	Price	Buy
IRFP250	Bristol Electronics		15			RFQ
IRFP250	Bristol Electronics		12			RFQ
IRFP250	Quest Components	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,30A I(D),TO-247AC	162	1 $4.5000 9 $2.2500 90 $1.9500	$1.9500 / $4.5000	Buy Now
IRFP250	Quest Components	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,30A I(D),TO-247AC	77	1 $4.5000 8 $3.3000 24 $3.0000	$3.0000 / $4.5000	Buy Now
IRFP250	Quest Components	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,30A I(D),TO-247AC	32	1 $4.5000 8 $3.3000 24 $3.0000	$3.0000 / $4.5000	Buy Now
IRFP250	Quest Components	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,30A I(D),TO-247AC	9	1 $3.8100 4 $3.1750 9 $2.7940	$2.7940 / $3.8100	Buy Now
IRFP250	Quest Components	TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,30A I(D),TO-247AC	1	1 $5.0595	$5.0595	Buy Now
IRFP250	ComSIT USA	Electronic Component RoHS: Not Compliant	Stock DE - 0 Stock ES - 292 Stock US - 0 Stock MX - 0 Stock CN - 0 Stock HK - 0			RFQ

Part Details for IRFP250

IRFP250 CAD Models

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IRFP250 Part Data Attributes

Parametric Data

Show differences only	IRFP250 International Rectifier Buy Now Datasheet	Buy Now	Compare Parts: IRFP250 International Rectifier Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC Select a part to compare:

Rohs Code	No
Part Life Cycle Code	Transferred
Ihs Manufacturer	INTERNATIONAL RECTIFIER CORP
Reach Compliance Code	compliant
ECCN Code	EAR99
HTS Code	8541.29.00.95
Avalanche Energy Rating (Eas)	410 mJ
Case Connection	DRAIN
Configuration	SINGLE
DS Breakdown Voltage-Min	200 V
Drain Current-Max (ID)	30 A
Drain-source On Resistance-Max	0.085 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247AC
JESD-30 Code	R-PSFM-T3
JESD-609 Code	e0
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT
Peak Reflow Temperature (Cel)	225
Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	190 W
Power Dissipation-Max (Abs)	190 W
Pulsed Drain Current-Max (IDM)	120 A
Qualification Status	Not Qualified
Surface Mount	NO
Terminal Finish	Tin/Lead (Sn/Pb)
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING
Transistor Element Material	SILICON

Alternate Parts for IRFP250

This table gives cross-reference parts and alternative options found for IRFP250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description	Compare
IRFP250N	International Rectifier	Check for Price	Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN	IRFP250 vs IRFP250N
IRFP250PBF	International Rectifier	Check for Price	Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC	IRFP250 vs IRFP250PBF

Part Number	Manufacturer	Composite Price	Description	Compare
IRFIP250	International Rectifier	Check for Price	Power Field-Effect Transistor, 22A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247	IRFP250 vs IRFIP250
IRFP250	Samsung Semiconductor	Check for Price	Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN	IRFP250 vs IRFP250
IRFP250	Intersil Corporation	Check for Price	33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247	IRFP250 vs IRFP250
IRFP250	Vishay Siliconix	Check for Price	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	IRFP250 vs IRFP250
BUZ341	Siemens	Check for Price	Power Field-Effect Transistor, 33A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218,	IRFP250 vs BUZ341
IRFP250PBF	Vishay Siliconix	Check for Price	Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3	IRFP250 vs IRFP250PBF
IRFP250NPBF	International Rectifier	Check for Price	Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3	IRFP250 vs IRFP250NPBF
SSH40N20	Fairchild Semiconductor Corporation	Check for Price	Power Field-Effect Transistor, 40A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	IRFP250 vs SSH40N20
IRFP250	Rochester Electronics LLC	Check for Price	33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247	IRFP250 vs IRFP250

IRFP250 Frequently Asked Questions (FAQ)

The maximum SOA for the IRFP250 is typically defined by the voltage and current ratings, but it's also dependent on the application and operating conditions. A general guideline is to ensure that the device operates within the boundaries of the maximum voltage, current, and power dissipation ratings.
Proper thermal management is crucial for the IRFP250. Ensure good thermal contact between the device and a heat sink, and consider using thermal interface materials. Also, follow the recommended PCB layout and thermal design guidelines to minimize thermal resistance.
The recommended gate drive voltage for the IRFP250 is typically between 10V to 15V, depending on the application and required switching speed. However, it's essential to ensure the gate drive voltage is within the recommended range to avoid damage or malfunction.
Yes, the IRFP250 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application is within the device's recommended operating frequency range.
To protect the IRFP250 from overvoltage and overcurrent conditions, consider using voltage clamping devices, such as zener diodes or transient voltage suppressors, and overcurrent protection devices, such as fuses or current sensors.