Datasheets
IRFP241R by:

Power Field-Effect Transistor, 20A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Details for IRFP241R by Harris Semiconductor

Overview of IRFP241R by Harris Semiconductor

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Part Details for IRFP241R

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IRFP241R Part Data Attributes

IRFP241R Harris Semiconductor
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IRFP241R Harris Semiconductor Power Field-Effect Transistor, 20A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 510 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 122 ns
Turn-on Time-Max (ton) 98 ns

Alternate Parts for IRFP241R

This table gives cross-reference parts and alternative options found for IRFP241R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP241R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFP241 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP241R vs IRFP241
IRFP241 20A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Intersil Corporation IRFP241R vs IRFP241
IRFP241R 20A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRFP241R vs IRFP241R
Part Number Description Manufacturer Compare
IRFP241R 20A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRFP241R vs IRFP241R
IRFP241 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP241R vs IRFP241
IRFP241 20A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Intersil Corporation IRFP241R vs IRFP241

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