Datasheets
IRFP23N50LPBF by:

Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN

Part Details for IRFP23N50LPBF by International Rectifier

Overview of IRFP23N50LPBF by International Rectifier

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Part Details for IRFP23N50LPBF

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IRFP23N50LPBF Part Data Attributes

IRFP23N50LPBF International Rectifier
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IRFP23N50LPBF International Rectifier Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-247AC
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 410 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.235 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 370 W
Pulsed Drain Current-Max (IDM) 92 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP23N50LPBF

This table gives cross-reference parts and alternative options found for IRFP23N50LPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP23N50LPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFP23N50LPBF Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN Vishay Intertechnologies IRFP23N50LPBF vs IRFP23N50LPBF
IRFP23N50L Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix IRFP23N50LPBF vs IRFP23N50L
IRFP23N50L Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC PACKAGE-3 International Rectifier IRFP23N50LPBF vs IRFP23N50L
IRFP23N50LPBF Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 Vishay Siliconix IRFP23N50LPBF vs IRFP23N50LPBF
Part Number Description Manufacturer Compare
IRFP23N50L Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC PACKAGE-3 International Rectifier IRFP23N50LPBF vs IRFP23N50L
IXFC26N50 Power Field-Effect Transistor, 23A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS220, 3 PIN IXYS Corporation IRFP23N50LPBF vs IXFC26N50
IRFP23N50LPBF Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN Vishay Intertechnologies IRFP23N50LPBF vs IRFP23N50LPBF
APT24F50S Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3 Microsemi Corporation IRFP23N50LPBF vs APT24F50S
APT24F50B Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc IRFP23N50LPBF vs APT24F50B
IXFV26N50P Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN IXYS Corporation IRFP23N50LPBF vs IXFV26N50P
2SK1499 Power Field-Effect Transistor, 25A I(D), 450V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET NEC Electronics Group IRFP23N50LPBF vs 2SK1499
IXTT26N50P Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IRFP23N50LPBF vs IXTT26N50P
IXFH26N55Q Power Field-Effect Transistor, 26A I(D), 550V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 IXYS Corporation IRFP23N50LPBF vs IXFH26N55Q
IRFP23N50L Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN Vishay Intertechnologies IRFP23N50LPBF vs IRFP23N50L

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