Part Details for IRFP054N by Infineon Technologies AG
Overview of IRFP054N by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFP054N
IRFP054N CAD Models
IRFP054N Part Data Attributes
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IRFP054N
Infineon Technologies AG
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Datasheet
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IRFP054N
Infineon Technologies AG
Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-247AC, 3PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 360 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 81 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 290 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP054N
This table gives cross-reference parts and alternative options found for IRFP054N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP054N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFP054 | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Vishay Siliconix | IRFP054N vs IRFP054 |
| IRFP054NPBF | Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | IRFP054N vs IRFP054NPBF |
| IRFP054PBF | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | Vishay Siliconix | IRFP054N vs IRFP054PBF |
| HUF75333G3 | 56A, 55V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | IRFP054N vs HUF75333G3 |
| STW80NE06-10 | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | IRFP054N vs STW80NE06-10 |
| HUF75343G3 | Power Field-Effect Transistor, 75A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | IRFP054N vs HUF75343G3 |
| HUF75345G3 | Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Harris Semiconductor | IRFP054N vs HUF75345G3 |
| HUF75339G3 | Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | IRFP054N vs HUF75339G3 |
| HUF75333G3 | Power Field-Effect Transistor, 66A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Fairchild Semiconductor Corporation | IRFP054N vs HUF75333G3 |
| HUF75339G3 | 70A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | IRFP054N vs HUF75339G3 |