Part Details for IRFN5210 by TT Electronics Power and Hybrid / Semelab Limited
Overview of IRFN5210 by TT Electronics Power and Hybrid / Semelab Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFN5210
IRFN5210 CAD Models
IRFN5210 Part Data Attributes
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IRFN5210
TT Electronics Power and Hybrid / Semelab Limited
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Datasheet
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IRFN5210
TT Electronics Power and Hybrid / Semelab Limited
34A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, CERAMIC PACKAGE-3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | SEMELAB LTD | |
| Part Package Code | TO-276AB | |
| Package Description | CHIP CARRIER, R-CBCC-N3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 780 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-276AB | |
| JESD-30 Code | R-CBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFN5210
This table gives cross-reference parts and alternative options found for IRFN5210. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN5210, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
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| IRFN5210 | Power Field-Effect Transistor, 34A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, CERAMIC PACKAGE-3 | TT Electronics Resistors | IRFN5210 vs IRFN5210 |
| IRFN5210R4 | 34A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, CERAMIC PACKAGE-3 | TT Electronics Power and Hybrid / Semelab Limited | IRFN5210 vs IRFN5210R4 |
| IRFN5210R4 | Power Field-Effect Transistor, 34A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, CERAMIC PACKAGE-3 | TT Electronics Resistors | IRFN5210 vs IRFN5210R4 |