Transistors
IRFM250DR1
Description: 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254, HERMETIC SEALED, METAL PACKAGE-3

Overview of IRFM250DR1 by TT Electronics Power and Hybrid / Semelab Limited

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

CAD Models for IRFM250DR1 by TT Electronics Power and Hybrid / Semelab Limited
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Part Data Attributes for IRFM250DR1 by TT Electronics Power and Hybrid / Semelab Limited

IRFM250DR1
TT Electronics Power and Hybrid / Semelab Limited
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
SEMELAB LTD
Part Package Code
TO-254
Package Description
FLANGE MOUNT, S-MSFM-P3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
HIGH VOLTAGE
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
27.4 A
Drain-source On Resistance-Max
0.105 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254
JESD-30 Code
S-MSFM-P3
JESD-609 Code
e1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
110 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN SILVER COPPER
Terminal Form
PIN/PEG
Terminal Position
SINGLE
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFM250DR1
    TT Electronics Power and Hybrid / Semelab Limited
    27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254, HERMETIC SEALED, METAL PACKAGE-3
    VS

Alternate Parts for IRFM250DR1

This table gives cross-reference parts and alternative options found for IRFM250DR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM250DR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFM250D Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier IRFM250DR1 vs IRFM250D
IRFM250D Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Resistors IRFM250DR1 vs IRFM250D
Part Number Description Manufacturer Compare
IRFM250UPBF Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier IRFM250DR1 vs IRFM250UPBF
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG IRFM250DR1 vs JANTXV2N7225
IRFM250-JQR-BR1 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors IRFM250DR1 vs IRFM250-JQR-BR1
2N7225DPBF 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Infineon Technologies AG IRFM250DR1 vs 2N7225DPBF
JAN2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 Microsemi Corporation IRFM250DR1 vs JAN2N7225
JANTXV2N7225U Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U3, U PKG-3 Microsemi Corporation IRFM250DR1 vs JANTXV2N7225U
SHD2183AS Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Sensitron Semiconductors IRFM250DR1 vs SHD2183AS
IRFM250D Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier IRFM250DR1 vs IRFM250D
SHD2183BS Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Sensitron Semiconductors IRFM250DR1 vs SHD2183BS
2N7225TXV Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier IRFM250DR1 vs 2N7225TXV

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