Datasheets
IRFL9110 by:

Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN

Part Details for IRFL9110 by International Rectifier

Overview of IRFL9110 by International Rectifier

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Price & Stock for IRFL9110

Part # Distributor Description Stock Price Buy
Bristol Electronics   1657
RFQ
Quest Components MOSFET Transistor, P-Channel, TO-261AA 2164
  • 1 $1.3500
  • 297 $0.5400
  • 1,482 $0.4725
$0.4725 / $1.3500 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-261AA 1325
  • 1 $2.5000
  • 161 $1.0000
  • 801 $0.8750
$0.8750 / $2.5000 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-261AA 1219
  • 1 $0.8100
  • 104 $0.3780
  • 530 $0.3375
$0.3375 / $0.8100 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-261AA 20
  • 1 $1.2500
  • 5 $1.0000
  • 21 $0.7500
$0.7500 / $1.2500 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 47
  • 1 $0.9200
  • 100 $0.6900
  • 1,000 $0.6000
$0.6000 / $0.9200 Buy Now

Part Details for IRFL9110

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IRFL9110 Part Data Attributes

IRFL9110 International Rectifier
Buy Now Datasheet
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IRFL9110 International Rectifier Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-261AA
Package Description SOT-223, 3 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.1 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 18 pF
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 2 W
Power Dissipation-Max (Abs) 3.1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL9110

This table gives cross-reference parts and alternative options found for IRFL9110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL9110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFL9110PBF Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 Vishay Siliconix IRFL9110 vs IRFL9110PBF
IRFL9110TR Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL9110 vs IRFL9110TR
IRFL9110TRPBF Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Siliconix IRFL9110 vs IRFL9110TRPBF
Part Number Description Manufacturer Compare
IRFL9110TRPBF Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL9110 vs IRFL9110TRPBF
IRFL9110PBF Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4 Vishay Siliconix IRFL9110 vs IRFL9110PBF
MMFT1N10ET3 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA onsemi IRFL9110 vs MMFT1N10ET3
MMFT1N10ET1 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA onsemi IRFL9110 vs MMFT1N10ET1
IRFL9110TRPBF Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4 Vishay Siliconix IRFL9110 vs IRFL9110TRPBF
MMFT1N10ET1 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA Motorola Mobility LLC IRFL9110 vs MMFT1N10ET1

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