Part Details for IRFL4315PBF by International Rectifier
Overview of IRFL4315PBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFL4315PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | MOSFET Transistor, N-Channel, SOT-223 | 286 |
|
$0.9760 / $2.4400 | Buy Now |
Part Details for IRFL4315PBF
IRFL4315PBF CAD Models
IRFL4315PBF Part Data Attributes
|
|
IRFL4315PBF
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRFL4315PBF
International Rectifier
Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-261AA | |
| Package Description | SOT-223, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 38 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 0.185 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PSSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.8 W | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFL4315PBF
This table gives cross-reference parts and alternative options found for IRFL4315PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL4315PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFL4315PBF | Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 | Infineon Technologies AG | IRFL4315PBF vs IRFL4315PBF |
| IRFL4315TRPBF | Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 | Infineon Technologies AG | IRFL4315PBF vs IRFL4315TRPBF |
| IRFL4315 | Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | Infineon Technologies AG | IRFL4315PBF vs IRFL4315 |
| IRFL4315TRPBF | Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 | International Rectifier | IRFL4315PBF vs IRFL4315TRPBF |