Datasheets
IRFK4JC50 by: International Rectifier

Power Field-Effect Transistor, 35A I(D), 600V, 0.175ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-240AA

Part Details for IRFK4JC50 by International Rectifier

Results Overview of IRFK4JC50 by International Rectifier

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IRFK4JC50 Information

IRFK4JC50 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRFK4JC50

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IRFK4JC50 Part Data Attributes

IRFK4JC50 International Rectifier
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IRFK4JC50 International Rectifier Power Field-Effect Transistor, 35A I(D), 600V, 0.175ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-240AA
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, R-PUFM-X4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Configuration PARALLEL, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.175 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-240AA
JESD-30 Code R-PUFM-X4
Number of Elements 4
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 500 W
Power Dissipation-Max (Abs) 500 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON