Part Details for IRFK4H450 by International Rectifier
Overview of IRFK4H450 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for IRFK4H450
IRFK4H450 CAD Models
IRFK4H450 Part Data Attributes
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IRFK4H450
International Rectifier
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Datasheet
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IRFK4H450
International Rectifier
Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-240AA
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | ISOLATED | |
| Configuration | PARALLEL, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 44 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-240AA | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 4 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 500 W | |
| Power Dissipation-Max (Abs) | 500 W | |
| Pulsed Drain Current-Max (IDM) | 176 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFK4H450
This table gives cross-reference parts and alternative options found for IRFK4H450. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFK4H450, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFK2D450 | Power Field-Effect Transistor, 22A I(D), 500V, 0.2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-240AA | International Rectifier | IRFK4H450 vs IRFK2D450 |
| MG50G2YM1 | TRANSISTOR 50 A, 450 V, 0.14 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-108A1A, 7 PIN, FET General Purpose Power | Toshiba America Electronic Components | IRFK4H450 vs MG50G2YM1 |
| BSM151F | Power Field-Effect Transistor, 56A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | IRFK4H450 vs BSM151F |
| BSM254F | Power Field-Effect Transistor, 35A I(D), 500V, 0.17ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | IRFK4H450 vs BSM254F |
| PM50502C | 0.12ohm, POWER, FET | Renesas Electronics Corporation | IRFK4H450 vs PM50502C |