Datasheets
IRFK4H450 by:

Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-240AA

Part Details for IRFK4H450 by International Rectifier

Overview of IRFK4H450 by International Rectifier

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for IRFK4H450

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IRFK4H450 Part Data Attributes

IRFK4H450 International Rectifier
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IRFK4H450 International Rectifier Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-240AA
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, R-PUFM-X4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Configuration PARALLEL, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-240AA
JESD-30 Code R-PUFM-X4
Number of Elements 4
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 500 W
Power Dissipation-Max (Abs) 500 W
Pulsed Drain Current-Max (IDM) 176 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFK4H450

This table gives cross-reference parts and alternative options found for IRFK4H450. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFK4H450, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM151F Power Field-Effect Transistor, 56A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens IRFK4H450 vs BSM151F
MG50G2DM1 TRANSISTOR 50 A, 450 V, 0.14 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-108B1A, 8 PIN, FET General Purpose Power Toshiba America Electronic Components IRFK4H450 vs MG50G2DM1

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