Transistors
IRFI840GLCPBF
Description: Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3

Overview of IRFI840GLCPBF by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFI840GLCPBF by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # IRFI840GLCPBF-ND
DigiKey MOSFET N-CH 500V 4.5A TO220-3 Min Qty: 1 Lead time: 14 Weeks Container: Tube 102
In Stock
  • 1 $2.8500
  • 50 $2.2580
  • 100 $1.9354
  • 500 $1.7204
  • 1,000 $1.4731
  • 2,000 $1.3871
  • 5,000 $1.3308
$1.3308 / $2.8500 Buy Now

CAD Models for IRFI840GLCPBF by Vishay Siliconix
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Part Data Attributes for IRFI840GLCPBF by Vishay Siliconix

IRFI840GLCPBF
Vishay Siliconix
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
300 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
4.5 A
Drain-source On Resistance-Max
0.85 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
18 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFI840GLCPBF
    Vishay Siliconix
    Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3
    VS

Alternate Parts for IRFI840GLCPBF

This table gives cross-reference parts and alternative options found for IRFI840GLCPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFI840GLCPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFI840G Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3 Vishay Siliconix IRFI840GLCPBF vs IRFI840G
IRF840FI 4.5A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics IRFI840GLCPBF vs IRF840FI
IRFI840G Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier IRFI840GLCPBF vs IRFI840G
IRFI840GPBF Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, FULLPAK-3 Vishay Siliconix IRFI840GLCPBF vs IRFI840GPBF
IRFI840GLC Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, FULLPAK-3 Vishay Siliconix IRFI840GLCPBF vs IRFI840GLC
IRFI840GLCPBF Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 International Rectifier IRFI840GLCPBF vs IRFI840GLCPBF
2SK1805 TRANSISTOR 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220IS, TO-220IS, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IRFI840GLCPBF vs 2SK1805
IRFS841 Power Field-Effect Transistor, 4.6A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRFI840GLCPBF vs IRFS841
Part Number Description Manufacturer Compare
IRFI840G Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3 Vishay Siliconix IRFI840GLCPBF vs IRFI840G
IRFI840GPBF Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3 International Rectifier IRFI840GLCPBF vs IRFI840GPBF
IRFI840G Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN International Rectifier IRFI840GLCPBF vs IRFI840G
IRFS841 Power Field-Effect Transistor, 4.6A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRFI840GLCPBF vs IRFS841
IRFI840GLC Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, FULLPAK-3 Vishay Siliconix IRFI840GLCPBF vs IRFI840GLC
IRFI840GLCPBF Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 International Rectifier IRFI840GLCPBF vs IRFI840GLCPBF
IRF840FI 4.5A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics IRFI840GLCPBF vs IRF840FI
2SK1805 TRANSISTOR 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220IS, TO-220IS, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IRFI840GLCPBF vs 2SK1805

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