Part Details for IRFHM8363TRPBF by International Rectifier
Overview of IRFHM8363TRPBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFHM8363TRPBF
IRFHM8363TRPBF CAD Models
IRFHM8363TRPBF Part Data Attributes
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IRFHM8363TRPBF
International Rectifier
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Datasheet
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IRFHM8363TRPBF
International Rectifier
Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | QFN | |
Package Description | SMALL OUTLINE, S-PDSO-N8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 29 mJ | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.0149 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 19 W | |
Pulsed Drain Current-Max (IDM) | 116 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFHM8363TRPBF
This table gives cross-reference parts and alternative options found for IRFHM8363TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFHM8363TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFHM8363TRPBF | Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | Infineon Technologies AG | IRFHM8363TRPBF vs IRFHM8363TRPBF |
IRFHM8363TR2PBF | Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | International Rectifier | IRFHM8363TRPBF vs IRFHM8363TR2PBF |