Part Details for IRFH7932TRPBF by Infineon Technologies AG
Overview of IRFH7932TRPBF by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IRFH7932TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
32AC7463
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Newark | Mosfet, N-Ch, 25A, 30V, Qfn-8, Transistor Polarity:N Channel, Continuous Drain Current Id:25A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0025Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Dissipationrohs Compliant: Yes |Infineon IRFH7932TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3379 |
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$0.6210 / $1.1400 | Buy Now |
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DISTI #
IRFH7932TRPBFCT-ND
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DigiKey | MOSFET N-CH 30V 24A/104A PQFN Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4019 In Stock |
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$0.4372 / $1.1600 | Buy Now |
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DISTI #
IRFH7932TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFH7932TRPBF) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.4073 / $0.4654 | Buy Now |
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DISTI #
942-IRFH7932TRPBF
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Mouser Electronics | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC RoHS: Compliant | 5273 |
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$0.4370 / $1.0100 | Buy Now |
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Future Electronics | Single N-Channel 30 V 3.3 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.3850 / $0.4000 | Buy Now |
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Future Electronics | Single N-Channel 30 V 3.3 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.3850 / $0.4000 | Buy Now |
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Rochester Electronics | IRFH7932 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 8077 |
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$0.4327 / $0.5091 | Buy Now |
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Ameya Holding Limited | Min Qty: 1005 | 9960 |
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$0.9410 / $0.9700 | Buy Now |
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DISTI #
SP001556482
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EBV Elektronik | Transistor MOSFET N-CH 30V 25A 8-Pin QFN T/R (Alt: SP001556482) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 30V 24A 3.4W 3.3m10V25A 2.35V100uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS | 37 |
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$0.7045 / $1.1926 | Buy Now |
Part Details for IRFH7932TRPBF
IRFH7932TRPBF CAD Models
IRFH7932TRPBF Part Data Attributes:
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IRFH7932TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFH7932TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 14 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 2 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3.4 W | |
| Pulsed Drain Current-Max (IDM) | 192 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |