Datasheets
IRFH5025TRPBF by:

Power Field-Effect Transistor, 3.8A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

Part Details for IRFH5025TRPBF by Infineon Technologies AG

Overview of IRFH5025TRPBF by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IRFH5025TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 91Y4691
Newark Mosfet, N-Ch, 250V, 25A, Pqfn-8, Transistor Polarity:N Channel, Continuous Drain Current Id:25A, Drain Source Voltage Vds:250V, On Resistance Rds(On):0.084Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Dissipationrohs Compliant: Yes |Infineon IRFH5025TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 70019690
RS MOSFET, 250V, 31A, 104 MOHM, 36 NC QG, PQFN 5X6 | Infineon IRFH5025TRPBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk 0
  • 2 $2.6000
  • 10 $2.4800
  • 20 $2.3400
  • 200 $2.2100
  • 500 $2.0800
$2.0800 / $2.6000 RFQ
Bristol Electronics   Min Qty: 2 140
  • 2 $4.4800
  • 7 $2.9120
  • 19 $2.2400
  • 57 $2.0908
  • 121 $1.9412
$1.9412 / $4.4800 Buy Now
Quest Components   112
  • 1 $6.0000
  • 7 $3.0000
  • 68 $2.8000
$2.8000 / $6.0000 Buy Now
DISTI # IRFH5025TRPBF
TME Transistor: N-MOSFET, unipolar, 250V, 3.8A, 3.6W, PQFN5X6 Min Qty: 4000 0
  • 4,000 $1.1300
$1.1300 RFQ
Win Source Electronics Secondary Side Synchronous Rectification | MOSFET N-CH 250V 3.8A PQFN56 7790
  • 30 $1.7676
  • 70 $1.4504
  • 110 $1.4051
  • 150 $1.3597
  • 195 $1.3144
  • 255 $1.1784
$1.1784 / $1.7676 Buy Now

Part Details for IRFH5025TRPBF

IRFH5025TRPBF CAD Models

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IRFH5025TRPBF Part Data Attributes

IRFH5025TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFH5025TRPBF Infineon Technologies AG Power Field-Effect Transistor, 3.8A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-N5
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 320 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 3.8 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 8.3 W
Pulsed Drain Current-Max (IDM) 46 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFH5025TRPBF

This table gives cross-reference parts and alternative options found for IRFH5025TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFH5025TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFH5025TR2PBF Power Field-Effect Transistor, 3.8A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier IRFH5025TRPBF vs IRFH5025TR2PBF

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