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Part Details for IRFH5010TRPBF by Infineon Technologies AG
Overview of IRFH5010TRPBF by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFH5010TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
74R1478
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Newark | Mosfet Transistor, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Power Dissipation:3.6W Rohs Compliant: Yes |Infineon IRFH5010TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
74R1479
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Newark | Mosfet Transistor, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Product Range:-Rohs Compliant: Yes |Infineon IRFH5010TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
IRFH5010TRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 13A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH5010TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0 |
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RFQ | |
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DISTI #
70019268
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RS | IRFH5010TRPBF N-channel MOSFET Transistor, 100 A, 100 V, 8-Pin PQFN | Infineon IRFH5010TRPBF RoHS: Not Compliant Min Qty: 8 Package Multiple: 1 Container: Bulk | 0 |
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$1.4600 / $1.8300 | RFQ |
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Rochester Electronics | IRFH5010 - N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 1 |
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$0.7299 / $0.8587 | Buy Now |
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DISTI #
IRFH5010TRPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 13A, 250W, PQFN5X6 Min Qty: 4000 | 0 |
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$1.1300 | RFQ |
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Ameya Holding Limited | Single N-Channel 100 V 9 mOhm 101 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm | 4000 |
|
RFQ | |
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DISTI #
TMOS3436
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Rutronik | N-CH 100V 13A 7,5mOhm PQFN5X6 RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Reel |
Stock DE - 4000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.7630 / $0.9891 | Buy Now |
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LCSC | 100V 9m50A10V 4V150uA 1PCSNChannel PQFN-8(5x6) MOSFETs ROHS | 985 |
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$0.7491 / $1.3712 | Buy Now |
Part Details for IRFH5010TRPBF
IRFH5010TRPBF CAD Models
IRFH5010TRPBF Part Data Attributes:
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IRFH5010TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFH5010TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-N5 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 227 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |