Datasheets
IRFF9230-JQR-B by:

Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN

Part Details for IRFF9230-JQR-B by TT Electronics Resistors

Overview of IRFF9230-JQR-B by TT Electronics Resistors

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Part Details for IRFF9230-JQR-B

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IRFF9230-JQR-B Part Data Attributes

IRFF9230-JQR-B TT Electronics Resistors
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IRFF9230-JQR-B TT Electronics Resistors Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TT ELECTRONICS PLC
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IRFF9230-JQR-B

This table gives cross-reference parts and alternative options found for IRFF9230-JQR-B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF9230-JQR-B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFF9230-JQR-BR1 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors IRFF9230-JQR-B vs IRFF9230-JQR-BR1
JANTXV2N6851 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation IRFF9230-JQR-B vs JANTXV2N6851
IRFF9230 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation IRFF9230-JQR-B vs IRFF9230
JANS2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, Microsemi Corporation IRFF9230-JQR-B vs JANS2N6851
2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Temic Semiconductors IRFF9230-JQR-B vs 2N6851
JANTXV2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, Microsemi Corporation IRFF9230-JQR-B vs JANTXV2N6851
2N6851R1 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF9230-JQR-B vs 2N6851R1
JANTXV2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF9230-JQR-B vs JANTXV2N6851
JANTX2N6851 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation IRFF9230-JQR-B vs JANTX2N6851
JANTX2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, Microsemi Corporation IRFF9230-JQR-B vs JANTX2N6851
Part Number Description Manufacturer Compare
IRFF9230R1 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF9230-JQR-B vs IRFF9230R1
JANTX2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Defense Logistics Agency IRFF9230-JQR-B vs JANTX2N6851
IRFF9230-JQR-BR1 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF9230-JQR-B vs IRFF9230-JQR-BR1
JANTX2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.83ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Semicoa Semiconductors IRFF9230-JQR-B vs JANTX2N6851
JANTX2N6851 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation IRFF9230-JQR-B vs JANTX2N6851
JANTX2N6851 Small Signal Field-Effect Transistor, 4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF9230-JQR-B vs JANTX2N6851
JANS2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Infineon Technologies AG IRFF9230-JQR-B vs JANS2N6851
JANTXV2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF9230-JQR-B vs JANTXV2N6851
2N6851R1 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF9230-JQR-B vs 2N6851R1
JANTX2N6851 Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, Microsemi Corporation IRFF9230-JQR-B vs JANTX2N6851

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