Part Details for IRFF330 by Vishay Siliconix
Overview of IRFF330 by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRFF330
IRFF330 CAD Models
IRFF330 Part Data Attributes:
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IRFF330
Vishay Siliconix
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Datasheet
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IRFF330
Vishay Siliconix
Power Field-Effect Transistor, 3.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SILICONIX INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 3.5 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205 | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFF330
This table gives cross-reference parts and alternative options found for IRFF330. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF330, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTX2N6800 | Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corporation | IRFF330 vs JANTX2N6800 |
| JANTXV2N6800 | Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Semicoa Semiconductors | IRFF330 vs JANTXV2N6800 |
| IRFF330 | Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF330 vs IRFF330 |
| IRFF330-JQR-B | Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF330 vs IRFF330-JQR-B |
| JAN2N6800 | Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corp (RETIRED) | IRFF330 vs JAN2N6800 |
| 2N6800 | Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corp (RETIRED) | IRFF330 vs 2N6800 |
| IRFF330R1 | Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF330 vs IRFF330R1 |
| IRFF330 | 3.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | IRFF330 vs IRFF330 |
| 2N6800R1 | Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF330 vs 2N6800R1 |
| JAN2N6800 | Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corporation | IRFF330 vs JAN2N6800 |