Part Details for IRFF321 by Harris Semiconductor
Results Overview of IRFF321 by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFF321 Information
IRFF321 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFF321
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 2.5A, 350V, 1.8 OHM, N-Channel POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 164 |
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$0.4723 / $0.5556 | Buy Now |
Part Details for IRFF321
IRFF321 CAD Models
IRFF321 Part Data Attributes
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IRFF321
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRFF321
Harris Semiconductor
Power Field-Effect Transistor, 2.5A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 350 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 150 ns | |
| Turn-on Time-Max (ton) | 90 ns |
Alternate Parts for IRFF321
This table gives cross-reference parts and alternative options found for IRFF321. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF321, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFF321 | Rochester Electronics LLC | Check for Price | 2.5A, 350V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | IRFF321 vs IRFF321 |