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Transistors / Power Field-Effect Transistors / IRFF313
Datasheets
IRFF313 by:
International Rectifier
Fairchild Semiconductor Corporation
Freescale Semiconductor
General Electric Solid State
Harris Semiconductor
International Rectifier
Intersil Corporation
Motorola Semiconductor Products
New Jersey Semiconductor Products Inc
Rochester Electronics LLC
Thomson Consumer Electronics
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Part Details for IRFF313 by International Rectifier

Results Overview of IRFF313 by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Medical Imaging Robotics and Drones

IRFF313 Information

IRFF313 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFF313

Part # Distributor Description Stock Price Buy
Rochester Electronics 1.15A, 350V, 5ohm, N-Channel Power MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 44
  • 1 $1.3900
  • 25 $1.3600
  • 100 $1.3100
  • 500 $1.2500
  • 1,000 $1.1800
$1.1800 / $1.3900 Buy Now

Part Details for IRFF313

IRFF313 CAD Models

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IRFF313 Part Data Attributes

Parametric Data
IRFF313 International Rectifier
Buy Now Datasheet
Compare Parts:
IRFF313 International Rectifier Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 350 V
Drain Current-Max (ID) 1.15 A
Drain-source On Resistance-Max 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 15 W
Pulsed Drain Current-Max (IDM) 4.5 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRFF313

This table gives cross-reference parts and alternative options found for IRFF313. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF313, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFF313 Vishay Siliconix Check for Price Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, IRFF313 vs IRFF313
IRFF313 Rochester Electronics LLC Check for Price 1.15A, 350V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF IRFF313 vs IRFF313
Part Number Manufacturer Composite Price Description Compare
IRFF313 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF IRFF313 vs IRFF313
IRFF310-JQR-BR1 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN IRFF313 vs IRFF310-JQR-BR1
2N6786 Semiconductor Technology Inc Check for Price Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRFF313 vs 2N6786
JANTX2N6786 Microsemi Corporation Check for Price Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, IRFF313 vs JANTX2N6786
IRFF311R Harris Semiconductor Check for Price Power Field-Effect Transistor, 1.35A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF IRFF313 vs IRFF311R
IRFF312R Harris Semiconductor Check for Price Power Field-Effect Transistor, 1.15A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF IRFF313 vs IRFF312R
2N6786.MODR1 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN IRFF313 vs 2N6786.MODR1
IRFF313R Harris Semiconductor Check for Price Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF IRFF313 vs IRFF313R
JANTXV2N6786 Harris Semiconductor Check for Price Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF IRFF313 vs JANTXV2N6786
IRFF310-JQR-B TT Electronics Power and Hybrid / Semelab Limited Check for Price 1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN IRFF313 vs IRFF310-JQR-B